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Highly Efficient Broadband Photodetectors Based on the Lithography-Free Au/Bi2O2Se/Au Heterostructures

Abstract

As one of the bismuth based oxychalcogenides materials, Bi2O2Se ultrathin films have received intense research interests attributed to the high carrier mobility, narrow bandgap, ultrafast intrinsic photoreponse and long-term ambient stability, exhibiting great potentials in the electronics and optoelectronics applications. However, the device performances of the photodetectors based on the metal/Bi2O2Se/metal structures were degraded due to the undesirable defects or contaminants from the electrodes deposition or the sample transfer process. In this work, highly efficient photodetectors based on the Au/Bi2O2Se junctions were achieved with the Au electrodes transferred under the assistance of a probe tip to avoid any contaminants from the traditional lighography methods. Furthermore, to improve the charge transfer efficiency or specifically the intensity of the elelctrical fields at the Au/Bi2O2Se interfaces and along the Bi2O2Se channel, the device annealing temperature was optimized to narrow the van der Waals gap at the Au/Bi2O2Se interface and the device channel length was shortened to improve the overall device performances. With all the efforts, the maximum device photoresponsivity was 9.1 A/W, and the device response time could approach 36 μs, besides, the photodetectors were featured as broadband spectral response from 360nm to 1090nm.

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Publication details

The article was received on 06 Aug 2019, accepted on 05 Oct 2019 and first published on 07 Oct 2019


Article type: Paper
DOI: 10.1039/C9NR06723J
Nanoscale, 2019, Accepted Manuscript

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    Highly Efficient Broadband Photodetectors Based on the Lithography-Free Au/Bi2O2Se/Au Heterostructures

    X. Liu, R. Li, C. Hong, G. Huang, D. Pan, Z. Ni, Y. Huang, X. Ren, Y. Cheng and W. Huang, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C9NR06723J

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