Jump to main content
Jump to site search


Sub-60 mV/decade switching in ion-gel-gated In-Sn-O transistors with a nano-thick charge trapping layer

Abstract

In this paper, we present a new method for reducing the subthreshold swing (SS) of ionic-modulated oxide field-effect transistors (FETs) below 60 mV/decade. The electrical performances of ion gel-gated In-Sn-O FETs with and without a nano-thick Al2O3 charge trapping layer are compared and studied. A significant SS reduction in the In-Sn-O FETs is observed when naturally oxidized Al2O3 and an ion gel are used as the gate stacking dielectric layer. The back sweep SS reaches as low as ∼27 mV/decade that extend over three orders of magnitude in drain current. A theoretical explanation for these results based on energy band diagrams is presented. The proposed devices described here have the potential to open up new avenues for further development of low power electronics, as well as for energy efficient memristive devices and synaptic electronics.

Back to tab navigation

Supplementary files

Publication details

The article was received on 03 Aug 2019, accepted on 24 Oct 2019 and first published on 24 Oct 2019


Article type: Communication
DOI: 10.1039/C9NR06641A
Nanoscale, 2019, Accepted Manuscript

  •   Request permissions

    Sub-60 mV/decade switching in ion-gel-gated In-Sn-O transistors with a nano-thick charge trapping layer

    W. Liu, J. Sun, W. Qiu, Y. Chen, Y. Huang, J. Wang and J. Yang, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C9NR06641A

Search articles by author

Spotlight

Advertisements