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InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

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Abstract

Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal–oxide–semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a beam divergence angle θ = 30° is demonstrated using a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, g2(0) = 0.05, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs.

Graphical abstract: InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

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Publication details

The article was received on 18 Jul 2019, accepted on 13 Oct 2019 and first published on 14 Oct 2019


Article type: Paper
DOI: 10.1039/C9NR06114B
Nanoscale, 2019, Advance Article

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    InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

    A. Jaffal, W. Redjem, P. Regreny, H. S. Nguyen, S. Cueff, X. Letartre, G. Patriarche, E. Rousseau, G. Cassabois, M. Gendry and N. Chauvin, Nanoscale, 2019, Advance Article , DOI: 10.1039/C9NR06114B

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