Jump to main content
Jump to site search


Monolayer MoS2 growth at the Au–SiO2 interface

Author affiliations

Abstract

Atomically thin transition-metal dichalcogenides (TMDs) are attracting great interest for future electronic applications. Even though much effort has been devoted to preparing large-area, high-quality TMDs over the past few years, the samples are usually grown on substrate surfaces. Here, we demonstrate the direct growth of a MoS2 monolayer at the interface between a Au film and a SiO2 substrate. MoS2 grains were nucleated below Au films deposited on SiO2 via interface diffusion and then grown into a continuous MoS2 film. By programming the Au pattern deposited, controlled growth of MoS2 with the desired size and geometry was achieved over preferred locations, facilitating its integration into functional field-effect transistors. Our findings elucidate the fabrication of a two-dimensional semiconductor at the interface of bulk three-dimensional solids, providing a novel means for establishing a clean interface junction. It also offers a promising alternative to the site-selective synthesis of TMDs, which is expected to aid the fabrication of TMD-based nanodevices.

Graphical abstract: Monolayer MoS2 growth at the Au–SiO2 interface

Back to tab navigation

Supplementary files

Publication details

The article was received on 17 Jun 2019, accepted on 19 Aug 2019 and first published on 28 Aug 2019


Article type: Communication
DOI: 10.1039/C9NR05119H
Nanoscale, 2019, Advance Article

  •   Request permissions

    Monolayer MoS2 growth at the Au–SiO2 interface

    H. E. Lim, T. Irisawa, N. Okada, M. Okada, T. Endo, Y. Nakanishi, Y. Maniwa and Y. Miyata, Nanoscale, 2019, Advance Article , DOI: 10.1039/C9NR05119H

Search articles by author

Spotlight

Advertisements