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Issue 39, 2019
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Self-protective GaInN-based light-emitting diodes with VO2 nanowires

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Abstract

We presented a new functional GaInN-based light-emitting diode (LED) that is capable of protecting itself from unwanted thermal damage (a so-called self-protective LED). This functionality was achieved by incorporating VO2 nanowires on the LED chip. VO2 nanowires, as metal–insulator transition materials, show a phase transition from insulating to metallic at a characteristic transition temperature. By placing a VO2 nanowire between the n- and p-contacts of an LED, a parallel circuit was formed with the existing diode. As the VO2 nanowire became metal-like at its characteristic temperature, it induced a short-circuit state in the device, protecting the LED from heat damage at elevated temperatures. Details on the self-protective LED were elucidated, from a conceptual description to experimental proof.

Graphical abstract: Self-protective GaInN-based light-emitting diodes with VO2 nanowires

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Supplementary files

Article information


Submitted
17 May 2019
Accepted
25 Sep 2019
First published
26 Sep 2019

Nanoscale, 2019,11, 18444-18448
Article type
Paper

Self-protective GaInN-based light-emitting diodes with VO2 nanowires

J. W. Lee, J. Park, H. Kwon, W. Hong, J. K. Kim and J. Cho, Nanoscale, 2019, 11, 18444
DOI: 10.1039/C9NR04227J

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