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Issue 33, 2019
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Epitaxial graphene/silicon carbide intercalation: a minireview on graphene modulation and unique 2D materials

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Abstract

Intercalation of atomic species through epitaxial graphene on silicon carbide began only a few years following its initial report in 2004. The impact of intercalation on the electronic properties of the graphene is well known; however, the intercalant itself can also exhibit intriguing properties not found in nature. This realization has inspired new interest in epitaxial graphene/silicon carbide (EG/SiC) intercalation, where the scope of the technique extends beyond modulation of graphene properties to the creation of new 2D forms of 3D materials. The mission of this minireview is to provide a concise introduction to EG/SiC intercalation and to demonstrate a simplified approach to EG/SiC intercalation. We summarize the primary techniques used to achieve and characterize EG/SiC intercalation, and show that thermal evaporation-based methods can effectively substitute for more complex synthesis techniques, enabling large-scale intercalation of non-refractory metals and compounds including two-dimensional silver (2D-Ag) and gallium nitride (2D-GaNx).

Graphical abstract: Epitaxial graphene/silicon carbide intercalation: a minireview on graphene modulation and unique 2D materials

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Publication details

The article was received on 01 May 2019, accepted on 31 Jul 2019 and first published on 05 Aug 2019


Article type: Minireview
DOI: 10.1039/C9NR03721G
Nanoscale, 2019,11, 15440-15447

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    Epitaxial graphene/silicon carbide intercalation: a minireview on graphene modulation and unique 2D materials

    N. Briggs, Z. M. Gebeyehu, A. Vera, T. Zhao, K. Wang, A. De La Fuente Duran, B. Bersch, T. Bowen, K. L. Knappenberger and J. A. Robinson, Nanoscale, 2019, 11, 15440
    DOI: 10.1039/C9NR03721G

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