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Issue 44, 2019
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Control of electron tunnelling by fine band engineering of semiconductor potential barriers

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Abstract

Quantum tunnelling (QTN) devices show a promising future for energy saving and ultrafast operation thanks to the unprecedented development of two-dimensional materials. However, the immature techniques for device fabrication hamper severely their further progress and application. To overcome such a challenge, the abundant processing technology used in semiconductor electronics is worth considering. Herein, a device prototype is fabricated based on band engineering to enable flexible control of QTN probability (TP) within a III–V semiconductor multilayer. While the initial heights of all barriers are set to obtain similar TPs under no bias, the conduction band slopes of InGaSb and AlSb barriers are modulated to a state where their TPs vary reversely under electric fields. On this basis, revealed by in situ bias electron holography, a unidirectional accumulation of electrons has been realized inside the multilayer structure. Moreover, the inevitable element segregation/diffusion during device growth plays a key role in band structure optimization, which is confirmed by strain analysis. The feasibility of the above modulation strategy is also confirmed by theoretical simulations. Our findings might provide a new perspective on the innovation of semiconductor devices and the application of QTN effect.

Graphical abstract: Control of electron tunnelling by fine band engineering of semiconductor potential barriers

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Publication details

The article was received on 16 Apr 2019, accepted on 30 Sep 2019 and first published on 09 Oct 2019


Article type: Paper
DOI: 10.1039/C9NR03268A
Nanoscale, 2019,11, 21376-21385

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    Control of electron tunnelling by fine band engineering of semiconductor potential barriers

    Y. Zhao, C. Cai, Y. Zhang, X. Zhao, Y. Xu, C. Liang, Z. Niu, Y. Shi and R. Che, Nanoscale, 2019, 11, 21376
    DOI: 10.1039/C9NR03268A

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