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Control on Electron Tunnelling by Fine Band Engineering upon Semiconductor Potential Barriers

Abstract

Quantum tunnelling (QTN) devices show a promising future for energy saving and ultrafast operating thanks to the unprecedented development of two-dimensional materials. However, the immature techniques for device fabrication hamper severely their further progress and application. To overcome such a challenge, the abundant processing technology used in semiconductor electronics is worth resorting to. Herein, a device prototype is fabricated based on band engineering to enable flexible control on QTN probability (TP) within an III-V semiconductor multilayer. While the initial heights of all barriers are set to obtain similar TP under no bias, the conduction band slopes of InGaSb and AlSb barriers are modulated to a state where their TP varies reversely under electric fields. On that basis, revealed by in-situ bias electron holography, a unidirectional accumulation of electrons has been realized inside the multilayer structure. Moreover, the inevitable element segregation/diffusion during device growth play a key role in band structure optimization, which is confirmed by strain analysis. The feasibility of the above modulation strategy is also confirmed by theoretical simulations. Our findings might provide a new perspective on the innovation of semiconductor devices and the application of QTN effect.

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Publication details

The article was received on 16 Apr 2019, accepted on 30 Sep 2019 and first published on 09 Oct 2019


Article type: Paper
DOI: 10.1039/C9NR03268A
Nanoscale, 2019, Accepted Manuscript

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    Control on Electron Tunnelling by Fine Band Engineering upon Semiconductor Potential Barriers

    Y. Zhao, C. Cai, Y. Zhang, X. Zhao, Y. Xu, C. liang, Z. Niu, Y. Shi and R. Che, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C9NR03268A

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