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Ultrafast carrier dynamics of conformally grown semi-polar (112 @#x0305;2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires

Abstract

The growth of semi-polar (112 @#x0305;2) GaN/InGaN multiple-quantum-well (MQW) co-axial heterostructure shells around m-axial GaN core nanowire on Si substrate using MOCVD is reported for the first time. The core GaN nanowire and GaN/InGaN MQW shells are grown in a two-step growth sequence of vapor-liquid-solid and vapor-solid growth modes. The luminescence and carrier dynamics of GaN/InGaN MQW coaxial nanowires are studied by photoluminescence, cathodoluminescence, and low temperature time-resolved photoluminescence (TRPL). The emission is tuned from 430 nm to 590 nm by increasing the InGaN QW thickness. The non-single exponential decay measured by low-temperature TRPL was attributed to the indium fluctuations in InGaN QW. The ultrafast radiative lifetime was measured from 14 ps to 26 ps with different emission wavelengths at a very high internal quantum efficiency upto 68 %. An ultrafast carrier lifetime was assigned to the growth of the InGaN QW on semi-polar (112 @#x0305;2) growth facet and the improved carrier collection efficiency due to the radial growth of the GaN/InGaN MQW shells. Such an ultrafast carrier dynamics of NWs provides a meaningful active medium for high speed optoelectronic applications.

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Supplementary files

Publication details

The article was received on 02 Apr 2019, accepted on 14 May 2019 and first published on 14 May 2019


Article type: Paper
DOI: 10.1039/C9NR02823D
Nanoscale, 2019, Accepted Manuscript

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    Ultrafast carrier dynamics of conformally grown semi-polar (112 @#x0305;2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires

    M. A. Johar, H. G. Song, A. Waseem, J. Kang, J. Ha, Y. Cho and S. Ryu, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C9NR02823D

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