Issue 22, 2019

Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi2O2Se nanoplate with strong spin–orbit interaction

Abstract

We report on phase-coherent transport studies of a Bi2O2Se nanoplate and on observation of universal conductance fluctuations and spin–orbit interaction induced reduction in fluctuation amplitude in the nanoplate. Thin-layered Bi2O2Se nanoplates are grown by chemical vapor deposition (CVD) and transport measurements are made on a Hall-bar device fabricated from a CVD-grown nanoplate. The measurements show weak antilocalization at low magnetic fields at low temperatures, as a result of spin–orbit interaction, and a crossover toward weak localization with increasing temperature. Temperature dependences of characteristic transport lengths, such as spin relaxation length, phase coherence length, and mean free path, are extracted from the low-field measurement data. Universal conductance fluctuations are visible in the low-temperature magnetoconductance over a large range of magnetic fields and the phase coherence length extracted from the autocorrelation function is consistent with the result obtained from the weak localization analysis. More importantly, we find a strong reduction in amplitude of the universal conductance fluctuations and show that the results agree with the analysis assuming strong spin–orbit interaction in the Bi2O2Se nanoplate.

Graphical abstract: Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi2O2Se nanoplate with strong spin–orbit interaction

Supplementary files

Article information

Article type
Communication
Submitted
18 Mar 2019
Accepted
11 May 2019
First published
13 May 2019

Nanoscale, 2019,11, 10622-10628

Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi2O2Se nanoplate with strong spin–orbit interaction

M. Meng, S. Huang, C. Tan, J. Wu, X. Li, H. Peng and H. Q. Xu, Nanoscale, 2019, 11, 10622 DOI: 10.1039/C9NR02347J

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