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Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

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Abstract

We demonstrate that charge-density-wave devices with quasi-two-dimensional 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 1014 H+cm−2. The current–voltage characteristics of these devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other two-dimensional devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these “all-metallic” charge-density-wave devices is attributed to the quasi-2D nature of the electron transport in the nanoscale-thickness channel, high concentration of charge carriers in the utilized charge-density-wave phases, and two-dimensional device design. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.

Graphical abstract: Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

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Publication details

The article was received on 22 Feb 2019, accepted on 08 Apr 2019 and first published on 09 Apr 2019


Article type: Paper
DOI: 10.1039/C9NR01614G
Citation: Nanoscale, 2019, Advance Article

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    Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

    A. K. Geremew, F. Kargar, E. X. Zhang, S. E. Zhao, E. Aytan, M. A. Bloodgood, T. T. Salguero, S. Rumyantsev, A. Fedoseyev, D. M. Fleetwood and A. A. Balandin, Nanoscale, 2019, Advance Article , DOI: 10.1039/C9NR01614G

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