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Thermally driven homonuclear-stacking phase of MoS2 through desulfurization

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Abstract

Engineering phase transitions or finding new polymorphs offers tremendous opportunities for developing functional materials. We reveal that the thermally driven desulfurization of single-crystalline MoS2 samples improves transport properties by reducing the band gap and further induces metallization. Semi-desulfurization, i.e., removal of the topmost S layer, results in the placement of the exposed Mo layers directly on top of the following sub-layers, together with the bottom S layer of the top layer. This homonuclear (AA) stacking derived from the AA′ stacking of the hexagonal (2H) phase is retained even after further desulfurization of the remaining bottom S layer, i.e., full desulfurization of the top layer. Our findings fundamentally explain why the 2H phase of TMDs is characterized by AA′ stacking.

Graphical abstract: Thermally driven homonuclear-stacking phase of MoS2 through desulfurization

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Publication details

The article was received on 14 Feb 2019, accepted on 22 Apr 2019 and first published on 24 Apr 2019


Article type: Paper
DOI: 10.1039/C9NR01369E
Nanoscale, 2019, Advance Article

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    Thermally driven homonuclear-stacking phase of MoS2 through desulfurization

    Y. H. Hwang, W. S. Yun, G. Cha, S. C. Hong and S. W. Han, Nanoscale, 2019, Advance Article , DOI: 10.1039/C9NR01369E

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