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Sub-10 nm Stable Graphene Quantum Dots Embedded in Hexagonal Boron Nitride

Abstract

Graphene quantum dots (GQDs), a zero-dimensional material system with distinct physical properties, have great potentials in the applications of photonics, electronics, photovoltaics, and quantum information. Especially, GQD is one of promising candidates for quantum computing. In principle, sub-10 nm size is required for GQDs to present the intrinsic quantum properties. However, with such extreme size, GQDs have predominant edges with lots of active dangling bonds and thus are not stable. Satisfying the demands of both quantum size and stability is therefore of great challenge in the design of GQDs. Herein we demonstrate the fabrication of sub-10 nm stable GQD array by embedding them into large-bandgap hexagonal boron nitride (h-BN). With this method, the dangling bonds of GQDs were passivated by surrounding h-BN lattice to ensure high stability, meanwhile maintaining their intrinsic quantum properties. The sub-10 nm nanopore array was first milled in h-BN by advanced high-resolution helium ion microscope and then GQDs were directly grown in them through chemical vapour deposition process. Stability analysis proved that the imbedded GQDs show negligible property decay after baking at 100 ℃ in air for 100 days. The success in preparing sub-10 nm stable GQD array will promote the physical exploration and potential applications in this unique zero-dimensional in-plane quantum material.

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Publication details

The article was accepted on 13 Feb 2019 and first published on 13 Feb 2019


Article type: Communication
DOI: 10.1039/C9NR00412B
Citation: Nanoscale, 2019, Accepted Manuscript

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    Sub-10 nm Stable Graphene Quantum Dots Embedded in Hexagonal Boron Nitride

    D. Chen, R. qiao, X. Xu, W. Dong, L. Wang, R. Ma, C. Liu, Z. Zhang, M. Wu, L. Liu, L. Bao, H. Wang, P. Gao, K. Liu and D. Yu, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C9NR00412B

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