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Issue 23, 2019
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Modulating phase by metasurfaces with gated ultra-thin TiN films

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Abstract

Active control over the flow of light is highly desirable because of its applicability to information processing, telecommunication, and spectroscopic imaging. In this paper, by employing the tunability of carrier density in a 1 nm titanium nitride (TiN) film, we numerically demonstrate deep phase modulation (PM) in an electrically tunable gold strip/TiN film hybrid metasurface. A 337° PM is achieved at 1.550 μm with a 3% carrier density change in the TiN film. We also demonstrate that a continuous 180° PM can be realized at 1.537 μm by applying a realistic experiment-based gate voltage bias and continuously changing the carrier density in the TiN film. The proposed design of active metasurfaces capable of deep PM near the wavelength of 1.550 μm has considerable potential in active beam steering, dynamic hologram generation, and flat photonic devices with reconfigurable functionalities.

Graphical abstract: Modulating phase by metasurfaces with gated ultra-thin TiN films

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Article information


Submitted
07 Jan 2019
Accepted
09 May 2019
First published
14 May 2019

Nanoscale, 2019,11, 11167-11172
Article type
Paper
Author version available

Modulating phase by metasurfaces with gated ultra-thin TiN films

H. Jiang, H. Reddy, D. Shah, Z. A. Kudyshev, S. Choudhury, D. Wang, Y. Jiang and A. V. Kildishev, Nanoscale, 2019, 11, 11167
DOI: 10.1039/C9NR00205G

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