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Structural and electrical characterization of monolithic core–double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy

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Abstract

We have studied the epitaxy and structural characterization of monolithic n-GaN/Al/p-AlGaN nanowire heterostructures. It is found that high quality, nearly defect free, full shell epitaxial Al can be grown in situ on Al(Ga)N nanowires and vice versa. Detailed scanning transmission electron microscopy (STEM), high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) suggest that the Al (111) plane maintains an epitaxial relationship with Al(Ga)N (0001) in the nanowire growth direction. Full ultraviolet composition range (340 nm–210 nm) Al/Al(Ga)N core–double shell nanowire backward diode characteristics were investigated. We have demonstrated a monolithic n++-GaN/Al/p++-Al(Ga)N nanowire backward diode, wherein an epitaxial Al layer serves as the tunnel junction. Such an Al(Ga)N-based n–p–n nanowire backward diode exhibits record low resistivity (<1.5 × 10−4 Ω cm2) and a low turn-on voltage of ∼2.7 V.

Graphical abstract: Structural and electrical characterization of monolithic core–double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy

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Publication details

The article was received on 03 Jan 2019, accepted on 26 Jan 2019 and first published on 28 Jan 2019


Article type: Paper
DOI: 10.1039/C9NR00081J
Citation: Nanoscale, 2019, Advance Article

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    Structural and electrical characterization of monolithic core–double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy

    S. M. Sadaf, Y.-H. Ra, S. Zhao, T. Szkopek and Z. Mi, Nanoscale, 2019, Advance Article , DOI: 10.1039/C9NR00081J

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