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MoTe2 van der Waals Homojunction p-n Diode with Low Resistive Metal Contacts

Abstract

Although many studies have focused on transition metal dichalcogenides heterojunction p-n diodes, homojunction p-n diodes still require more extensive study. We present a van der Waals p-MoTe2/n-MoTe2 homojunction p-n diode with low resistive metal contacts. Such two-dimensional homojunction devices with low contact resistance can be used in varied applications in the electronics industry. The device structure consists of stacked nanoflakes of p-MoTe2 and n-MoTe2. In this investigation, we implement a deep ultraviolet light-driven doping technique in a N2 gas environment to modulate the carrier concentration in a multilayered p-MoTe2 flake, which is consequently inverted to n-MoTe2. The deep ultraviolet light-driven doping provides environmental stability in the treated devices. We use ohmic metal contacts for the homojunction p-n diode and achieve excellent gate-dependent rectifying behavior with a rectification ratio of up to 104. Contrary to heterojunctions, the ideality factor is found to be 1.05 for zero gate bias, indicative of good interface quality at the p-MoTe2/n-MoTe2 junction, owing to low charge trapping sites at the homojunction interface. In addition, low-temperature measurements are performed to determine the barrier height for different gate biases. This study contributes to research on van der Waals homojunction p-n diodes, which show much potential for nanoelectronic and optoelectronic devices.

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Publication details

The article was received on 30 Dec 2018, accepted on 10 Apr 2019 and first published on 11 Apr 2019


Article type: Paper
DOI: 10.1039/C8NR10526J
Citation: Nanoscale, 2019, Accepted Manuscript

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    MoTe2 van der Waals Homojunction p-n Diode with Low Resistive Metal Contacts

    S. Aftab, M. F. Khan, P. Gautam, H. Noh and J. Eom, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C8NR10526J

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