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The effect of strain on effective Duffing nonlinearity in the CVD-MoS2 resonator

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Abstract

We demonstrate all electrical measurements on NEMS devices fabricated using CVD grown monolayer MoS2. The as-grown monolayer film of MoS2 on top of the SiO2/Si wafer is processed to fabricate arrays and individual NEMS devices without the complex pick and transfer techniques associated with graphene. The electromechanical properties of the devices are on par with those fabricated using the exfoliation method. The frequency response of these devices is then used as a probe to estimate the linear thermal expansion coefficient of the material and evaluate the effect of strain on the effective Duffing nonlinearity in the devices.

Graphical abstract: The effect of strain on effective Duffing nonlinearity in the CVD-MoS2 resonator

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Publication details

The article was received on 27 Dec 2018, accepted on 27 Mar 2019 and first published on 01 Apr 2019


Article type: Paper
DOI: 10.1039/C8NR10452B
Citation: Nanoscale, 2019, Advance Article

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    The effect of strain on effective Duffing nonlinearity in the CVD-MoS2 resonator

    C. Samanta, N. Arora, K. K. V., S. Raghavan and A. K. Naik, Nanoscale, 2019, Advance Article , DOI: 10.1039/C8NR10452B

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