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Issue 16, 2019
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Hydrogen-assisted step-edge nucleation of MoSe2 monolayers on sapphire substrates

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Abstract

The fabrication of large-area single crystalline monolayer transition metal dichalcogenides (TMDs) is essential for a range of electric and optoelectronic applications. Chemical vapor deposition (CVD) is a promising method to achieve this goal by employing orientation control or alignment along the crystalline lattice of the substrate such as sapphire. On the other hand, a fundamental understanding of the aligned-growth mechanism of TMDs is limited. In this report, we show that the controlled introduction of H2 during the CVD growth of MoSe2 plays a vital role in the step-edge aligned nucleation on a c-sapphire (0001) substrate. In particular, the MoSe2 domains nucleate along the [11[2 with combining macron]0] step-edge orientation by flowing H2 subsequent to pure Ar. Systematic studies, including the H2 introduction time, flow rate, and substrate temperature, suggest that the step-edge aligned nucleation of MoSe2 can be controlled by the hydrogen concentration on the sapphire substrate. These results offer important insights into controlling the epitaxial growth of 2D materials on a crystalline substrate.

Graphical abstract: Hydrogen-assisted step-edge nucleation of MoSe2 monolayers on sapphire substrates

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Supplementary files

Article information


Submitted
21 Dec 2018
Accepted
27 Mar 2019
First published
28 Mar 2019

Nanoscale, 2019,11, 7701-7709
Article type
Paper

Hydrogen-assisted step-edge nucleation of MoSe2 monolayers on sapphire substrates

Y. Hwang and N. Shin, Nanoscale, 2019, 11, 7701
DOI: 10.1039/C8NR10315A

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