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When Dendrimers are not Better - Rational Design of Nanolayers for High-Performance Organic Electronics Devices

Abstract

Several generations of carbosilane dendrimers with quatrothiophene end groups were studied by X-Ray scattering in small and wide angles, differential scanning calorimetry, polarizing optical and atomic force microscopy and molecular modelling. It was established that semiconducting properties of such materials are determined by a formation of smectic structures in which aliphatic regions, possessing low degree of the ordering, alternate with highly-ordered herring-bone type crystallites formed by aromatic fragments. Presence of long aliphatic spacers in the dendrimers’ structure allows easy formation of such crystallites. Such dendrimers assume flattened conformations, as smectic mesophase is thermodynamically preferable in a wide temperature range. Only in the dendrimers of the fifth generation, as density of periphery regions increases substantially,  stacking of oligothiophene groups is not enough to hold together, and the molecules take on spherical shape. As a result, extended conducting conjugated regions do nor form, and dendrimers of high generations possess comparatively low semiconducting properties. From the technological point of view, quatrothiophene based carbosilane dendrimers are able to form highly uniform functional films. However, use of lower generation dendrimers is much more preferable, as additional synthetic steps for the production of higher generation compounds do not lead to the improvement of functional properties.

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Publication details

The article was received on 15 Nov 2018, accepted on 05 Feb 2019 and first published on 07 Feb 2019


Article type: Paper
DOI: 10.1039/C8NR09241A
Citation: Nanoscale, 2019, Accepted Manuscript

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    When Dendrimers are not Better - Rational Design of Nanolayers for High-Performance Organic Electronics Devices

    M. А. Shcherbina, O. Borshchev, A. P. Pleshkova, S. Ponomarenko and S. N. Chvalun, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C8NR09241A

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