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Issue 10, 2019
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Silicon substrate effects on ionic current blockade in solid-state nanopores

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Abstract

We investigated the roles of silicon substrate material compositions in ionic current blockade in solid-state nanopores. When detecting single nanoparticles using an ionic current in a Si3N4 nanopore supported on a doped silicon wafer, resistive pulses were found to be blunted significantly via signal retardation due to predominant contributions of large capacitance at the ultrathin membrane. Unexpectedly, in contrast, changing the substrate material to non-doped silicon led to the sharpening of the spike-like signal feature, suggesting a better temporal resolution of the cross-channel ionic current measurements by virtue of the thick intrinsic semiconductor layer that served to diminish the net chip capacitance. The present results suggest the importance of the choice of Si compositions regarding the capacitance effects to attain better spatiotemporal resolution in solid-state nanopore sensors.

Graphical abstract: Silicon substrate effects on ionic current blockade in solid-state nanopores

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Publication details

The article was received on 09 Nov 2018, accepted on 09 Jan 2019 and first published on 22 Feb 2019


Article type: Communication
DOI: 10.1039/C8NR09042D
Nanoscale, 2019,11, 4190-4197
  • Open access: Creative Commons BY-NC license
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    Silicon substrate effects on ionic current blockade in solid-state nanopores

    M. Tsutsui, K. Yokota, T. Nakada, A. Arima, W. Tonomura, M. Taniguchi, T. Washio and T. Kawai, Nanoscale, 2019, 11, 4190
    DOI: 10.1039/C8NR09042D

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