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Issue 7, 2019
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Voltage-reduced low-defect graphene oxide: a high conductivity, near-zero temperature coefficient of resistance material

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Abstract

A highly conductive graphene derivative was produced by using a low-defect form of graphene oxide, oxo-G, in conjunction with voltage-reduction, a simple and environmentally-benign procedure for removing oxygen-containing functional groups. A low temperature coefficient of resistance was achieved, making this material promising for temperature-stable electronics and sensors.

Graphical abstract: Voltage-reduced low-defect graphene oxide: a high conductivity, near-zero temperature coefficient of resistance material

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Publication details

The article was received on 12 Oct 2018, accepted on 10 Dec 2018 and first published on 10 Dec 2018


Article type: Communication
DOI: 10.1039/C8NR08285E
Citation: Nanoscale, 2019,11, 3112-3116

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    Voltage-reduced low-defect graphene oxide: a high conductivity, near-zero temperature coefficient of resistance material

    K. W. Silverstein, C. E. Halbig, J. S. Mehta, A. Sharma, S. Eigler and J. M. Mativetsky, Nanoscale, 2019, 11, 3112
    DOI: 10.1039/C8NR08285E

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