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High growth per cycle thermal atomic layer deposition of Ni films using an electron-rich precursor

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Abstract

An efficient process for thermal atomic layer deposition (ALD) of Ni film with high growth per cycle (GPC) value is developed in this study using an electron-rich compound (N,N,N′,N′-tetramethylethylenediamine) (bis(2,4-pentanedionato)) nickel(II) and anhydrous hydrazine as the reactants. The thermal properties and adsorption behavior of selected compounds were studied. Significantly, a high film GPC value of 2.1 Å per cycle for ALD was achieved, and the deposited film exhibited high purity, low resistivity and a smooth surface. We believe that such an efficient method for high GPC thermal ALD of Ni and even other transition metals will benefit ALD technology development.

Graphical abstract: High growth per cycle thermal atomic layer deposition of Ni films using an electron-rich precursor

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Publication details

The article was received on 03 Oct 2018, accepted on 30 Nov 2018 and first published on 03 Dec 2018


Article type: Communication
DOI: 10.1039/C8NR08040B
Citation: Nanoscale, 2019, Advance Article
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    High growth per cycle thermal atomic layer deposition of Ni films using an electron-rich precursor

    Y. Zhang, L. Du, X. Liu and Y. Ding, Nanoscale, 2019, Advance Article , DOI: 10.1039/C8NR08040B

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