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Issue 8, 2019
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A large-scale, ultrahigh-resolution nanoemitter ordered array with PL brightness enhanced by PEALD-grown AlN coating

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Abstract

III-nitride solid-state microdisplays have significant advantages, including high brightness and high resolution, for the development of advanced displays, high-definition projectors, head-mounted displays, large-capacity optical communication systems, and so forth. Herein, a high-brightness InGaN/GaN multiple-quantum-well (MQW) nanoemitter array with an ultrahigh resolution of 31 750 dpi was achieved by combining a top-down fabrication with surface passivation of plasma-enhanced atomic layer deposition (PEALD)-grown AlN coating. With regard to the nanometer-level top-down etching, the surface damage or defects on the newly-formed sidewall play a significant role in the photoluminescence (PL) quality. Note that these arrays can be effectively passivated by the PEALD-grown AlN coating with an over 345% PL enhancement. In addition, a sharp band bending at the interface of the luminescent InGaN QW and the AlN coating layer can electrically drift away the photogenerated electrons from the surface traps; this leads to enhancement of the bulk PL radiative recombination with a fast PL decay rate. Therefore, we have demonstrated a feasible way for realizing an advanced nanoemitter array with both high brightness and ultrahigh resolution for future smart displays, high-resolution imaging, big-data optical information systems and so on.

Graphical abstract: A large-scale, ultrahigh-resolution nanoemitter ordered array with PL brightness enhanced by PEALD-grown AlN coating

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Publication details

The article was received on 30 Sep 2018, accepted on 26 Jan 2019 and first published on 29 Jan 2019


Article type: Paper
DOI: 10.1039/C8NR07946C
Citation: Nanoscale, 2019,11, 3710-3717

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    A large-scale, ultrahigh-resolution nanoemitter ordered array with PL brightness enhanced by PEALD-grown AlN coating

    M. Peng, X. Zheng, S. Liu, H. Wei, Y. He, M. Li, Y. An, Y. Song and P. Qiu, Nanoscale, 2019, 11, 3710
    DOI: 10.1039/C8NR07946C

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