Issue 8, 2019

Graphene–Si CMOS oscillators


Graphene field-effect transistors (GFETs) offer a possibility of exploiting unique physical properties of graphene in realizing novel electronic circuits. However, graphene circuits often lack the voltage swing and switchability of Si complementary metal–oxide-semiconductor (CMOS) circuits, which are the main building block of modern electronics. Here we introduce graphene in Si CMOS circuits to exploit favorable electronic properties of both technologies and realize a new class of simple oscillators using only a GFET, Si CMOS D latch, and timing RC circuit. The operation of the two types of realized oscillators is based on the ambipolarity of graphene, i.e., the symmetry of the transfer curve of GFETs around the Dirac point. The ambipolarity of graphene also allowed to turn the oscillators into pulse-width modulators (with a duty cycle ratio ∼1 : 4) and voltage-controlled oscillators (with a frequency ratio ∼1 : 8) without any circuit modifications. The oscillation frequency was in the range from 4 kHz to 4 MHz and limited only by the external circuit connections, rather than components themselves. The demonstrated graphene–Si CMOS hybrid circuits pave the way to the more widespread adoption of graphene in electronics.

Graphical abstract: Graphene–Si CMOS oscillators

Supplementary files

Article information

Article type
27 Sep 2018
25 Jan 2019
First published
11 Feb 2019
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2019,11, 3619-3625

Graphene–Si CMOS oscillators

C. Gilardi, P. Pedrinazzi, K. A. Patel, L. Anzi, B. Luo, T. J. Booth, P. Bøggild and R. Sordan, Nanoscale, 2019, 11, 3619 DOI: 10.1039/C8NR07862A

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity