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Issue 46, 2019
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Dopant-induced localized light absorption in CsPbX3 (X = Cl, Br, I) perovskite quantum dots

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Abstract

Doping is known to play an important role in the optoelectronic properties of semiconducting materials. In this context, doped fully inorganic perovskite quantum dots (QDs) emerge as an alternative and unique semiconductor material with size-tunable bandgap, solution processability and high monodispersity. Here, we computationally simulated the optical features of gold doped fully inorganic CsPbX3 (X = Cl, Br, I) perovskite QDs to gain insight into the electric field modifications occurring upon doping. We base our calculation on state-of-the-art time dependent density functional theory. Our results confirm deep-level trap states induced by the gold dopant, significant absorption onset red-shift and the emergence of electric field hotspot regions. The impressive optical tunability of gold doped CsPbX3 (X = Cl, Br, I) perovskite QDs makes them promising candidates for future optoelectronic applications.

Graphical abstract: Dopant-induced localized light absorption in CsPbX3 (X = Cl, Br, I) perovskite quantum dots

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Publication details

The article was received on 21 Jul 2019, accepted on 22 Oct 2019 and first published on 08 Nov 2019


Article type: Paper
DOI: 10.1039/C9NJ03784E
New J. Chem., 2019,43, 18268-18276

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    Dopant-induced localized light absorption in CsPbX3 (X = Cl, Br, I) perovskite quantum dots

    J. H. Mokkath, New J. Chem., 2019, 43, 18268
    DOI: 10.1039/C9NJ03784E

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