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Boron-Doped Graphene Quantum Dots: An Efficient Photoanode for Dye Sensitized Solar Cell

Abstract

Boron-doped graphene quantum dots (B-GQDs) have been synthesized via a microwave reactor assisted process from bulk boron carbide (B4C) crystals and they are shown for enhanced photoactivity. The B-GQDs are found to be having an average lateral width of ~ 6 ± 2 nm, and thickness of ~ 0.2-0.3nm. Nano ZnO is incorporated to these B-GQDs to prepare a B-GQDs-ZnO composite based high-performance photo-anode for Dye-Sensitized Solar Cells (DSSC). Results showed highest power conversion efficiency of ~3.7 % with these new composites based DSSC, showing the potential of this composite in real cell applications.

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Publication details

The article was received on 04 Jan 2019, accepted on 06 Aug 2019 and first published on 13 Aug 2019


Article type: Paper
DOI: 10.1039/C9NJ00052F
New J. Chem., 2019, Accepted Manuscript

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    Boron-Doped Graphene Quantum Dots: An Efficient Photoanode for Dye Sensitized Solar Cell

    V. P. M, M. Praveen Kumar, C. Takahashi, S. Kundu, T. N. Narayanan and D. K. Pattanayak, New J. Chem., 2019, Accepted Manuscript , DOI: 10.1039/C9NJ00052F

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