Boron-Doped Graphene Quantum Dots: An Efficient Photoanode for Dye Sensitized Solar Cell
Boron-doped graphene quantum dots (B-GQDs) have been synthesized via a microwave reactor assisted process from bulk boron carbide (B4C) crystals and they are shown for enhanced photoactivity. The B-GQDs are found to be having an average lateral width of ~ 6 ± 2 nm, and thickness of ~ 0.2-0.3nm. Nano ZnO is incorporated to these B-GQDs to prepare a B-GQDs-ZnO composite based high-performance photo-anode for Dye-Sensitized Solar Cells (DSSC). Results showed highest power conversion efficiency of ~3.7 % with these new composites based DSSC, showing the potential of this composite in real cell applications.