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Physical vapor deposition (PVD): a method to fabricate modified g-C3N4 sheets

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Abstract

Modified g-C3N4 sheets (CNS) with a bandgap of 2.61 eV were fabricated through physical vapor deposition (PVD) of g-C3N4. During the PVD process, a series of gaseous derivatives derived from pristine g-C3N4 at 700 °C condense into CNS at low temperature (<400 °C). As a result, CNS still retains a typical semiconductor structure (bandgap of 2.61 eV), while at the same time, C[triple bond, length as m-dash]N and O–H defect groups were introduced to its tri-s-triazine-based structure.

Graphical abstract: Physical vapor deposition (PVD): a method to fabricate modified g-C3N4 sheets

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Publication details

The article was received on 26 Dec 2018, accepted on 03 Apr 2019 and first published on 03 Apr 2019


Article type: Paper
DOI: 10.1039/C8NJ06509H
Citation: New J. Chem., 2019, Advance Article

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    Physical vapor deposition (PVD): a method to fabricate modified g-C3N4 sheets

    X. Sun, X. An, S. Zhang, Z. Li, J. Zhang, W. Wu and M. Wu, New J. Chem., 2019, Advance Article , DOI: 10.1039/C8NJ06509H

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