Physical vapor deposition (PVD): a method to fabricate modified g-C3N4 sheets

Abstract

Modified g-C₃N₄ sheets (CNS) with a bandgap of 2.61 eV were fabricated through physical vapor deposition (PVD) of g-C₃N₄. During the PVD process, a series of gaseous derivatives derived from pristine g-C₃N₄ at 700 °C condense into CNS at low temperature (<400 °C). As a result, CNS still retains a typical semiconductor structure (bandgap of 2.61 eV), while at the same time, CN and O–H defect groups were introduced to its tri-s-triazine-based structure.