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Complete determination of the crystallographic orientation of ReX2 (X = S, Se) by polarized Raman spectroscopy

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Abstract

Polarized Raman spectroscopy on few-layer ReS2 and ReSe2 was carried out to determine the crystallographic orientations. Since monolayer ReX2 (X = S or Se) has a distorted trigonal structure with only an inversion center, there is in-plane anisotropy and the two faces of a monolayer crystal are not equivalent. Since many physical properties vary sensitively depending on the crystallographic orientation, it is important to develop a reliable method to determine the crystal axes of ReX2. By comparing the relative polarization dependences of some representative Raman modes measured with three different excitation laser energies with high-resolution scanning transmission electron microscopy, we established a reliable procedure to determine all three principal directions of few-layer ReX2, including a way to distinguish the two types of faces: a 2.41 eV laser for ReS2 or a 1.96 eV laser for ReSe2 should be chosen as the excitation source of polarized Raman measurements; then the relative directions of the maximum intensity polarization of the Raman modes at 151 and 212 cm−1 (124 and 161 cm−1) of ReS2 (ReSe2) can be used to determine the face types and the Re-chain direction unambiguously.

Graphical abstract: Complete determination of the crystallographic orientation of ReX2 (X = S, Se) by polarized Raman spectroscopy

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Publication details

The article was received on 23 Jul 2019, accepted on 23 Sep 2019 and first published on 23 Sep 2019


Article type: Communication
DOI: 10.1039/C9NH00487D
Nanoscale Horiz., 2019, Advance Article

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    Complete determination of the crystallographic orientation of ReX2 (X = S, Se) by polarized Raman spectroscopy

    Y. Choi, K. Kim, S. Y. Lim, J. Kim, J. M. Park, J. H. Kim, Z. Lee and H. Cheong, Nanoscale Horiz., 2019, Advance Article , DOI: 10.1039/C9NH00487D

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