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Electrically-doped CVD-graphene transparent electrodes: application in 365 nm light-emitting diodes

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Abstract

Electric-field-induced doping treatment is applied to a monolayer graphene (MLG) film to improve its usability as a transparent conductive electrode (TCE). Ni is used as a doping source, which produces conductive bridges consisting of ionized Ni by electro-migration from an Ni pad to the as-transferred chemical vapor deposition grown MLG films through AlN buffer layers, by applying voltages of 3.62 ± 0.34 V. As a result, the sheet resistance of the MLG reduces from 712 ± 75.2 Ω sq−1 to 216 ± 46.1 Ω sq−1 and the surface current increases from 6.63 ± 2.07 nA to 8.91 ± 1.62 nA. Additionally, the work function of the MLG increases from 4.36 eV to 5.0 eV due to p-type doping effects. The intercalation of Ni atoms into the MLG is directly confirmed by X-ray photoelectron spectroscopy and Raman spectrum analyses. Finally, the Ni-doped MLG is utilized as the TCE layer for 365 nm light-emitting diodes, exhibiting much better optical properties compared to a standard LED with a 100 nm-thick indium tin oxide electrode.

Graphical abstract: Electrically-doped CVD-graphene transparent electrodes: application in 365 nm light-emitting diodes

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Publication details

The article was received on 22 Oct 2018, accepted on 29 Jan 2019 and first published on 29 Jan 2019


Article type: Communication
DOI: 10.1039/C8NH00374B
Citation: Nanoscale Horiz., 2019, Advance Article

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    Electrically-doped CVD-graphene transparent electrodes: application in 365 nm light-emitting diodes

    M. Chae, T. H. Lee, K. R. Son, Y. W. Kim, K. S. Hwang and T. G. Kim, Nanoscale Horiz., 2019, Advance Article , DOI: 10.1039/C8NH00374B

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