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Improvement in hole transporting ability and device performance in quantum dot light emitting diodes

Abstract

In the research, we demonstrate a novel approach to improve device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 into poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transporting layer. In addition, the polyethyleneimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transporting layer was firstly applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139,909 cd/m2 and current efficiency of 27.2 cd/A were obtained from the optimized device with the configuration of ITO/PEDOT:PSS+BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.

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Publication details

The article was received on 02 Oct 2019, accepted on 21 Nov 2019 and first published on 21 Nov 2019


Article type: Paper
DOI: 10.1039/C9NA00618D
Nanoscale Adv., 2019, Accepted Manuscript
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    Improvement in hole transporting ability and device performance in quantum dot light emitting diodes

    P. Chiu and S. Yang, Nanoscale Adv., 2019, Accepted Manuscript , DOI: 10.1039/C9NA00618D

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