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High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

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Abstract

Nanostructured field effect transistor (FET) based sensors have emerged as a powerful bioanalytical technology. However, performance variations across multiple devices and between fabrication batches inevitably exist and present a significant challenge holding back the translation of this cutting-edge technology. We report an optimized and cost-effective fabrication process for high-performance indium oxide nanoribbon FET with a steep subthreshold swing of 80 mV per decade. Through systematic electrical characterizations of 57 indium oxide nanoribbon FETs from different batches, we demonstrate an optimal operation point within the subthreshold regime that mitigates the issue of device-to-device performance variation. A non-linear pH sensing of the fabricated indium oxide nanoribbon FETs is also presented.

Graphical abstract: High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

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Publication details

The article was received on 19 Sep 2019, accepted on 04 Nov 2019 and first published on 05 Nov 2019


Article type: Paper
DOI: 10.1039/C9NA00592G
Nanoscale Adv., 2019, Advance Article
  • Open access: Creative Commons BY-NC license
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    High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

    T. T. T. Pham, D. P. Tran and B. Thierry, Nanoscale Adv., 2019, Advance Article , DOI: 10.1039/C9NA00592G

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