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Tuning magnetic anisotropy in Co–BaZrO3 vertically aligned nanocomposites for memory device integration

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Abstract

Ferromagnetic nanostructures with strong anisotropic properties are highly desired for their potential integration into spintronic devices. Several anisotropic candidates, such as CoFeB and Fe–Pt, have been previously proposed, but many of them have limitations such as patterning issues or thickness restrictions. In this work, Co–BaZrO3 (Co–BZO) vertically aligned nanocomposite (VAN) films with tunable magnetic anisotropy and coercive field strength have been demonstrated to address this need. Such tunable magnetic properties are achieved through tuning the thickness of the Co–BZO VAN structures and the aspect ratio of the Co nanostructures, which can be easily integrated into spintronic devices. As a demonstration, we have integrated the Co–BZO VAN nanostructure into tunnel junction devices, which demonstrated resistive switching alluding to Co–BZO's immense potential for future spintronic devices.

Graphical abstract: Tuning magnetic anisotropy in Co–BaZrO3 vertically aligned nanocomposites for memory device integration

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Publication details

The article was received on 14 Jul 2019, accepted on 28 Sep 2019 and first published on 30 Sep 2019


Article type: Paper
DOI: 10.1039/C9NA00438F
Nanoscale Adv., 2019, Advance Article
  • Open access: Creative Commons BY license
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    Tuning magnetic anisotropy in Co–BaZrO3 vertically aligned nanocomposites for memory device integration

    B. Zhang, J. Huang, J. Jian, B. X. Rutherford, L. Li, S. Misra, X. Sun and H. Wang, Nanoscale Adv., 2019, Advance Article , DOI: 10.1039/C9NA00438F

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