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High-κ polymers of intrinsic microporosity: a new class of high temperature and low loss dielectrics for printed electronics

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Abstract

High performance polymer dielectrics are a key component for printed electronics. In this work, organo-soluble polymers of intrinsic microporosity (PIMs) are reported for the first time to demonstrate desirable dielectric properties with a high permittivity (or κ), heat resistance, and low dielectric loss simultaneously. Due to the highly dipolar sulfonyl side groups (4.5 D) and rigid contorted polymer backbone, a sulfonylated PIM (SO2-PIM) enabled friction-free rotation of sulfonyl dipoles in the nanopores. As such, an optimal balance between relatively high κ and low dielectric loss is achieved in a broad temperature window (−50–200 °C). For example, the discharged energy density reached 17 J cm−3 with κ = 6.0. The discharge efficiency was 94% at 150 °C/300 MV m−1 and 88% at 200 °C/200 MV m−1. Furthermore, its application as a high-κ gate dielectric in field effect transistors (FETs) is demonstrated. With the bilayer SO2-PIM/SiO2 gate dielectric, InSe FETs exhibited a high electron mobility in the range of 200–400 cm2 V−1 s−1, as compared to 40 cm2 V−1 s−1 for the bare SiO2-gated InSe FET. This study indicates that highly dipolar PIMs with a rigid polymer backbone and large free volume are promising as next generation gate dielectric materials for printed electronics.

Graphical abstract: High-κ polymers of intrinsic microporosity: a new class of high temperature and low loss dielectrics for printed electronics

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Publication details

The article was received on 13 Aug 2019, accepted on 31 Oct 2019 and first published on 31 Oct 2019


Article type: Communication
DOI: 10.1039/C9MH01261C
Mater. Horiz., 2019, Advance Article

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    High-κ polymers of intrinsic microporosity: a new class of high temperature and low loss dielectrics for printed electronics

    Z. Zhang, J. Zheng, K. Premasiri, M. Kwok, Q. Li, R. Li, S. Zhang, M. H. Litt, X. P. A. Gao and L. Zhu, Mater. Horiz., 2019, Advance Article , DOI: 10.1039/C9MH01261C

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