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Molecular spectroscopy in a solid-state device

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Abstract

The quantification of the electronic transport energy gap of a molecular semiconductor is essential for pursuing any challenge in molecular optoelectronics. However, this remains largely elusive because of the difficulties in its determination by conventional spectroscopic methods. This communication presents an in-device molecular spectroscopy (i-MOS) technique, which permits measuring this gap seamlessly, in real device operative conditions, at room temperature and without any previous knowledge of the material's parameters. This result is achieved by determining the occupied and unoccupied molecular orbitals of an organic semiconductor thin-film by using a single three terminal solid-state device.

Graphical abstract: Molecular spectroscopy in a solid-state device

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Publication details

The article was received on 10 Feb 2019, accepted on 18 Mar 2019 and first published on 07 May 2019


Article type: Communication
DOI: 10.1039/C9MH00218A
Mater. Horiz., 2019, Advance Article
  • Open access: Creative Commons BY license
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    Molecular spectroscopy in a solid-state device

    A. Atxabal, T. Arnold, S. Parui, E. Zuccatti, M. Cinchetti, F. Casanova, F. Ortmann and L. E. Hueso, Mater. Horiz., 2019, Advance Article , DOI: 10.1039/C9MH00218A

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