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Issue 3, 2019
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MoS2-capped CuxS nanocrystals: a new heterostructured geometry of transition metal dichalcogenides for broadband optoelectronics

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Abstract

Heterostructuring of different transition metal dichalcogenides (TMDs) leads to interesting band alignment and performance improvement, and thus enables new routes for the development of materials for next-generation semiconductor electronics. Herein, we introduce a new strategy for the design and synthesis of functional TMD heterostructures. The representative product, molybdenum disulfide-capped copper sulfide (CuxS@MoS2, 1.8 < x < 2.0), is typically obtained by chemical vapor deposition of cap-like MoS2 layers on CuxS nanocrystals, yielding the formation of a sharp, clean heterojunction interface. The heterostructures exhibit strong light–matter interactions over a broadband range, with interesting band alignment for separating photocarriers and mediating charge transfer. A phototransistor made from CuxS@MoS2 heterostructures shows particularly high photoresponse for near infrared light, which is enabled by the heterojunction of MoS2 with a small band gap semiconductor as well as the plasmonic enhancement from the CuxS nanocrystals. Our study paves a way for the development of new TMD heterostructures towards achieving functional electronics and optoelectronics.

Graphical abstract: MoS2-capped CuxS nanocrystals: a new heterostructured geometry of transition metal dichalcogenides for broadband optoelectronics

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Publication details

The article was received on 10 Jul 2018, accepted on 05 Nov 2018 and first published on 03 Jan 2019


Article type: Communication
DOI: 10.1039/C8MH00809D
Citation: Mater. Horiz., 2019,6, 587-594

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    MoS2-capped CuxS nanocrystals: a new heterostructured geometry of transition metal dichalcogenides for broadband optoelectronics

    Y. Li, A. A. Murthy, J. G. DiStefano, H. J. Jung, S. Hao, C. J. Villa, C. Wolverton, X. Chen and V. P. Dravid, Mater. Horiz., 2019, 6, 587
    DOI: 10.1039/C8MH00809D

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