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Volume 213, 2019
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Introduction to new memory paradigms: memristive phenomena and neuromorphic applications

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Abstract

This article provides a brief introduction to the Faraday Discussion “New memory paradigms: memristive phenomena and neuromorphic applications” held in Aachen, Germany, 15–17 October 2018. It will cover basic definitions of memristive switching elements, their main switching modes, and their most important performance parameters as well as applications in neuromorphic computing. The article comprises parts from the following sources: General Introduction and Introduction to Part V of Nanoelectronics and Information Technology, ed. R. Waser, Wiley-VCH, 2012; Chapter 4 of Nanotechnology: Volume 3: Information Technology I, ed. R. Waser, Wiley-VCH, Weinheim, 2008; Chapters 3–9 of Emerging Nanoelectronic Devices, ed. A. Chen, J. Hutchby, V. Zhirnov and G. Bourianoff, Wiley, 2015; Chapter 1 of Resistive Switching, ed. D. Ielmini and R. Waser, Wiley-VCH, 2016 (with permission by Wiley-VCH).

Graphical abstract: Introduction to new memory paradigms: memristive phenomena and neuromorphic applications

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Publication details

The article was received on 30 Nov 2018, accepted on 30 Nov 2018 and first published on 11 Feb 2019


Article type: Paper
DOI: 10.1039/C8FD90058B
Citation: Faraday Discuss., 2019,213, 11-27

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    Introduction to new memory paradigms: memristive phenomena and neuromorphic applications

    R. Waser, R. Dittmann, S. Menzel and T. Noll, Faraday Discuss., 2019, 213, 11
    DOI: 10.1039/C8FD90058B

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