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Volume 213, 2019
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Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

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Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

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Publication details

The article was first published on 21 Jan 2019


Article type: Discussion
DOI: 10.1039/C8FD90057D
Citation: Faraday Discuss., 2019,213, 259-286

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    Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

    M. Aono, C. Baeumer, P. Bartlett, S. Brivio, G. Burr, M. Burriel, E. Carlos, S. Deswal, J. Deuermeier, R. Dittmann, H. Du, E. Gale, S. Hambsch, H. Hilgenkamp, D. Ielmini, A. J. Kenyon, A. Kiazadeh, A. Kindsmüller, G. Kissling, I. Köymen, S. Menzel, D. Pla Asesio, T. Prodromakis, M. Santamaria, A. Shluger, D. Thompson, I. Valov, W. Wang, R. Waser, R. S. Williams, D. Wrana, D. Wouters, Y. Yang and A. Zaffora, Faraday Discuss., 2019, 213, 259
    DOI: 10.1039/C8FD90057D

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