Volume 213, 2019

Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

Abstract

The first page of this article is displayed as the abstract.

Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

Associated articles

Article information

Article type
Discussion
First published
21 Jan 2019

Faraday Discuss., 2019,213, 259-286

Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

M. Aono, C. Baeumer, P. Bartlett, S. Brivio, G. Burr, M. Burriel, E. Carlos, S. Deswal, J. Deuermeier, R. Dittmann, H. Du, E. Gale, S. Hambsch, H. Hilgenkamp, D. Ielmini, A. J. Kenyon, A. Kiazadeh, A. Kindsmüller, G. Kissling, I. Köymen, S. Menzel, D. Pla Asesio, T. Prodromakis, M. Santamaria, A. Shluger, D. Thompson, I. Valov, W. Wang, R. Waser, R. S. Williams, D. Wrana, D. Wouters, Y. Yang and A. Zaffora, Faraday Discuss., 2019, 213, 259 DOI: 10.1039/C8FD90057D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements