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A universal solution processed interfacial bilayer enabling ohmic contact in organic and hybrid optoelectronic devices

Abstract

Optoelectronic devices typically require low-resistance Ohmic contacts between the optical active layers and metal electrodes. Failure to make such a contact often results in a Schottky barrier which inhibits charge extraction and, in turn, reduces device performance. Here, we introduce a universal solution processable metal-oxide/organic interfacial bilayer which forms a near-perfect ohmic contact between both organic and inorganic semiconductors and metals. This bilayer comprises a Nb-doped TiO2 metal oxide with enhanced electron mobility and reduced trap density compared to pristine TiO2, in combination with a metal-chelating organic molecule to make an intimate electrical contact with silver metallic electrodes. Using this universal interfacial bilayer, we demonstrate substantial efficiency improvements in organic solar cells (from 9.3% to 12.6% PCE), light emitting diodes (from 0.6 to 2.2 Cd W-1) and transistors (from 19.7 to 13.9 V threshold voltage). In particular, a boost in efficiency for perovskite solar cells (from 18.7% up to 20.7% PCE) with up to 83% fill factor is achieved. Furthermore, perovskite solar cells employing this bilayer suffer no loss in efficiency after 1000 hours under continuous full-spectrum illumination.

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Publication details

The article was received on 11 Jul 2019, accepted on 02 Dec 2019 and first published on 02 Dec 2019


Article type: Paper
DOI: 10.1039/C9EE02202C
Energy Environ. Sci., 2019, Accepted Manuscript
  • Open access: Creative Commons BY license
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    A universal solution processed interfacial bilayer enabling ohmic contact in organic and hybrid optoelectronic devices

    J. R. Troughton, M. Neophytou, N. Gasparini, A. Seitkhan, F. Isikgor, X. Song, Y. Lin, T. Liu, H. Faber, E. Yengel, J. Kosco, M. Oszajca, B. Hartmeier, M. Rossier, N. Lüchinger, L. Tsetseris, H. Snaith, S. De Wolf, T. D. Anthopoulos, I. McCulloch and D. Baran, Energy Environ. Sci., 2019, Accepted Manuscript , DOI: 10.1039/C9EE02202C

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