Jump to main content
Jump to site search


Metal chalcogenide quantum dot-sensitized 1D-based semiconducting heterostructures for optical-related applications

Author affiliations

Abstract

In terms of understanding and tuning the optoelectronic behavior of 3rd generation solar cells, such as quantum dot (QD)-sensitized solar cells, QD-based heterostructures represent an excellent and relevant model system and opportunity for analyzing exciton dissociation and charge separation across a well-defined nanoscale interface. In particular, because QDs possess a tunable bandgap and the capability of initiating multi-electron exciton generation, QD-based components tend to be incorporated within optical-related devices, including photovoltaics, light emitting diodes, photoelectrochemical devices, photosensors, and phototransistors. The community has collectively expended significant effort in terms of creating, formulating, and optimizing novel forms of heterostructures comprised of QDs, immobilized by predominantly chemical means onto one-dimensional (1D) motifs, such as but not limited to carbon nanotubes (CNTs) and carbon nanofibers (CNFs). In so doing, it has been noted that key physical variables such as but not limited to (a) QD size, (b) QD loading and coverage, as well as (c) ligand identity can impact upon optoelectronic behavior of CNT-based heterostructures. In recent years, work has extended towards analyzing the optoelectronic ‘cross-communication’ between QDs with related, adjoining 1D semiconducting metal oxides, metal chalcogenides, and metal fluorides. In these examples, other important factors that also are relevant for determining the optical properties of these more generalized classes of heterostructures include parameters, such as (i) morphology, (ii) surface coverage, (iii) chemical composition of the underlying platform, (iv) QD identity, (v) luminescence properties of activating species, as well as (vi) the identity and concentration of dopant ions. In other words, to alter, manage, and manipulate the charge versus energy transfer channels within these materials in a deterministic manner requires basic insights into the close correlation and interplay between physical structure, chemical bonding, and observed performance.

Graphical abstract: Metal chalcogenide quantum dot-sensitized 1D-based semiconducting heterostructures for optical-related applications

Back to tab navigation

Publication details

The article was received on 23 Jul 2018, accepted on 06 Feb 2019 and first published on 28 Feb 2019


Article type: Perspective
DOI: 10.1039/C8EE02143K
Citation: Energy Environ. Sci., 2019, Advance Article

  •   Request permissions

    Metal chalcogenide quantum dot-sensitized 1D-based semiconducting heterostructures for optical-related applications

    S. Yue, L. Li, S. C. McGuire, N. Hurley and S. S. Wong, Energy Environ. Sci., 2019, Advance Article , DOI: 10.1039/C8EE02143K

Search articles by author

Spotlight

Advertisements