Issue 32, 2019

An electronic structure governed by the displacement of the indium site in In–S6 octahedra: LnOInS2 (Ln = La, Ce, and Pr)

Abstract

An extremely large displacement of the indium site in In–S6 octahedra in LnOInS2 (Ln = La, Ce, and Pr) was found in synchrotron X-ray diffraction. LaOInS2 with off-center indium in In–S6 octahedra exhibited a wider optical band gap than CeOInS2 and PrOInS2 with on-center indium. Therefore, the electronic structure of LnOInS2 is governed by the indium site with an extremely large displacement. All LnOInS2 produced H2 gas under visible light irradiation in the presence of sacrificial electron donors.

Graphical abstract: An electronic structure governed by the displacement of the indium site in In–S6 octahedra: LnOInS2 (Ln = La, Ce, and Pr)

Supplementary files

Article information

Article type
Paper
Submitted
12 Apr 2019
Accepted
16 Jul 2019
First published
24 Jul 2019

Dalton Trans., 2019,48, 12272-12278

An electronic structure governed by the displacement of the indium site in In–S6 octahedra: LnOInS2 (Ln = La, Ce, and Pr)

H. Ito, A. Miura, Y. Goto, Y. Mizuguchi, C. Moriyoshi, Y. Kuroiwa, M. Azuma, J. Liu, X. Wen, S. Nishioka, K. Maeda, Y. Masubuchi, N. C. Rosero-Navarro and K. Tadanaga, Dalton Trans., 2019, 48, 12272 DOI: 10.1039/C9DT01562K

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