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SnGa2GeSe6, A Benign Addition to AM2MQ6 family: Synthesis, Crystal Structure and Nonlinear Optical Performance

Abstract

The new selenide SnGa2GeSe6 in AM2MQ6 family has been synthesized for the first time by high temperature solid state reaction. It crystallizes in the non-centrosymmetric space group Fdd2 with cell dimensions of a = 47.195(9) Å, b = 7.5213(15) Å, c = 12.183(2) Å, and Z =16. SnGa2GeSe6’s crystal structure is characterized by a crisscross network of two types of infinite chains (i.e. 1 ∞[GaSe3] chain and 1 ∞[M3Se7] (M represents the two metal sites randomly occupied by Ga and Ge atoms in 1:1) chain), which is similar to SnGa2GeS6 and diverges strongly from its Ba analogue owing to the substitution of Ba with Sn atoms that contain stereochemically active lone pair electrons. Careful experimental researches have revealed that SnGa2GeSe6 exhibits an optical band gap of 1.98 eV and incongruent melting behavior. Furthermore, second harmonic generation (SHG) intensity of SnGa2GeSe6 powder sample is about 1.7 × AgGaS2 at the particle size of 150−200 μm with 2 μm laser as the fundamental light.

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Publication details

The article was received on 14 Jan 2019, accepted on 02 Apr 2019 and first published on 02 Apr 2019


Article type: Paper
DOI: 10.1039/C9DT00184K
Citation: Dalton Trans., 2019, Accepted Manuscript

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    SnGa2GeSe6, A Benign Addition to AM2MQ6 family: Synthesis, Crystal Structure and Nonlinear Optical Performance

    Z. Li, S. Zhang, Y. Guo, Z. Lin, J. Yao and Y. Wu, Dalton Trans., 2019, Accepted Manuscript , DOI: 10.1039/C9DT00184K

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