Dramatic magnetic phase designing in phosphorene
Phosphorene is a unique two-dimensional semiconductor that has huge potential for nanoelectronic, optoelectronic and spintronic applications and their cross-hybrid electronics. In particular, creation of magnetic phases in phosphorene selectively can provide a multitude of opportunities for developments in 2D spintronic circuits. Doping phosphorene with transition metal atoms can induce sustainable magnetic ordering making it a diluted magnetic system, however, the viability of high temperature magnetic phase and potential control remain unanswered. In this work, using first-principles calculations, we uncover the impact of doping Phosphorene with various 3d block elements (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) in increasing order of atomic numbers in various levels of doping. Such extensive study, help us find doping conditions that leads to a remarkable feasibility of ferromagnetism and antiferromagnetism up to a strikingly large temperature ∼ 1150 K, evaluated by mean field theory. The doping concentration, atom type can be used to systematically tune the phases from ferromagnetic, antiferromagnetic to non-magnetic ground states. Our work provides novel guidelines for engineering multi-functional spintronic components using Phosphorene as a base material for all-phosphorene spintronics.