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Dramatic magnetic phase designing in phosphorene

Abstract

Phosphorene is a unique two-dimensional semiconductor that has huge potential for nanoelectronic, optoelectronic and spintronic applications and their cross-hybrid electronics. In particular, creation of magnetic phases in phosphorene selectively can provide a multitude of opportunities for developments in 2D spintronic circuits. Doping phosphorene with transition metal atoms can induce sustainable magnetic ordering making it a diluted magnetic system, however, the viability of high temperature magnetic phase and potential control remain unanswered. In this work, using first-principles calculations, we uncover the impact of doping Phosphorene with various 3d block elements (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) in increasing order of atomic numbers in various levels of doping. Such extensive study, help us find doping conditions that leads to a remarkable feasibility of ferromagnetism and antiferromagnetism up to a strikingly large temperature ∼ 1150 K, evaluated by mean field theory. The doping concentration, atom type can be used to systematically tune the phases from ferromagnetic, antiferromagnetic to non-magnetic ground states. Our work provides novel guidelines for engineering multi-functional spintronic components using Phosphorene as a base material for all-phosphorene spintronics.

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Publication details

The article was received on 02 Sep 2019, accepted on 04 Oct 2019 and first published on 09 Oct 2019


Article type: Paper
DOI: 10.1039/C9CP04871E
Phys. Chem. Chem. Phys., 2019, Accepted Manuscript

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    Dramatic magnetic phase designing in phosphorene

    A. Nair, P. Kumari, M. V. Kamalakar and S. J. Ray, Phys. Chem. Chem. Phys., 2019, Accepted Manuscript , DOI: 10.1039/C9CP04871E

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