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Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure

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Abstract

In this work we present an innovative method of creating Si quantum dots under pulsed ion-beam exposure. The evolution of defect structure ODC(II) → E′ → ODC(I) → Si QDs in glassy SiO2 under ion-beam implantation was established by optical absorption and photoluminescence spectroscopies. Depending on the mode of ion exposure, it is possible to easily control the type and concentration of defects in the host and modify its optical properties for novel applications. Ab initio calculations confirm that bond softening in SiO2 is attainable via the use of Gd ion implantation. According to our experimental and theoretical results, the three-stage interaction of primary oxygen-deficient centers leads to the formation of stable silicon quantum dots with a size of 3.6 nm and luminescence at 1.8 eV excited by incoherent light.

Graphical abstract: Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure

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Publication details

The article was received on 26 Aug 2019, accepted on 01 Nov 2019 and first published on 05 Nov 2019


Article type: Paper
DOI: 10.1039/C9CP04715H
Phys. Chem. Chem. Phys., 2019, Advance Article

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    Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure

    A. F. Zatsepin, Yu. A. Kuznetsova and C. H. Wong, Phys. Chem. Chem. Phys., 2019, Advance Article , DOI: 10.1039/C9CP04715H

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