Jump to main content
Jump to site search


Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

Author affiliations

Abstract

We systematically investigate the effects of external electric field and interlayer coupling on the electronic structures and contact characteristics of hybrid graphene and tellurene (G/Te) van der Waals heterostructures (vdWHs) based on first-principles calculations. Our results show that the G/α-Te interface is formed by an n-type Schottky contact with a negligible Schottky barrier height (SBH), while the G/β-Te interface is formed by a p-type Schottky contact with a SBH of 0.51 eV. By applying external electric fields perpendicular to the G/Te interfaces or changing the interlayer distance between the graphene and tellurene monolayers, both Schottky barriers and contact types (n-type Schottky, p-type Schottky, and Ohmic) at the G/Te interfaces can be effectively modulated. The changes in charge transfer, as well as the corresponding interface dipole and potential step with the external electric field and interlayer coupling, are revealed to account for the reason for tunable Schottky and Ohmic contacts at the G/Te interfaces. Therefore, the G/Te vdWHs show tunable Schottky and Ohmic contacts with promising applications of graphene-based field-effect transistors in future experiments.

Graphical abstract: Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

Back to tab navigation

Supplementary files

Publication details

The article was received on 22 Aug 2019, accepted on 07 Oct 2019 and first published on 07 Oct 2019


Article type: Paper
DOI: 10.1039/C9CP04654B
Phys. Chem. Chem. Phys., 2019, Advance Article

  •   Request permissions

    Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

    X. Qin, W. Hu and J. Yang, Phys. Chem. Chem. Phys., 2019, Advance Article , DOI: 10.1039/C9CP04654B

Search articles by author

Spotlight

Advertisements