Jump to main content
Jump to site search


Structure and magnetic properties of highly oriented LaBaCo2O5+δ films deposited on Si wafers with Pt/Ti buffer layer

Author affiliations

Abstract

Fabrication of highly crystalline oxide films onto silicon wafers has long been a critical obstacle for integrating multi-functional oxides into silicon-based technology. Herein, Pt/Ti is used as a buffer layer for the integration of highly oriented crystalline LaBaCo2O5+δ (LBCO) thin films onto silicon via pulsed laser deposition. LBCO films are highly (00l) oriented with smooth and sharp LBCO/Pt interfaces. The highly oriented LBCO films exhibit a high magnetic transition temperature (TC) and large coercive field (HC) with superparamagnetism over those deposited on single crystal substrates. What is more, the metallic-like behavior with enhanced magnetoresistance is also observed. The opportunity of using a Pt/Ti buffer layer as the growth template opens an alternative route for integrating functional transition metal oxides with tunable magnetic properties into Si-based technology.

Graphical abstract: Structure and magnetic properties of highly oriented LaBaCo2O5+δ films deposited on Si wafers with Pt/Ti buffer layer

Back to tab navigation

Supplementary files

Publication details

The article was received on 13 Aug 2019, accepted on 18 Sep 2019 and first published on 19 Sep 2019


Article type: Paper
DOI: 10.1039/C9CP04484A
Phys. Chem. Chem. Phys., 2019, Advance Article

  •   Request permissions

    Structure and magnetic properties of highly oriented LaBaCo2O5+δ films deposited on Si wafers with Pt/Ti buffer layer

    J. Shaibo, R. Yang, Z. Wang, H. Huang, H. He, Q. Zhang and X. Guo, Phys. Chem. Chem. Phys., 2019, Advance Article , DOI: 10.1039/C9CP04484A

Search articles by author

Spotlight

Advertisements