Issue 36, 2019

Six new silicon phases with direct band gaps

Abstract

Six new silicon phases with direct band gaps were found through silicon atomic substitution of carbon in the known carbon structures via high-throughput calculations. The six newly discovered Si phases are in the space groups of Im[3 with combining macron]m, C2/c, I4/mcm, I4/mmm, P21/m, and P4/mbm, respectively. Their crystal structures, stabilities, mechanical properties, elastic anisotropy, and electronic and optical properties were systematically studied using first-principles density functional theory calculations. All the new phases were proved to be thermodynamically and mechanically stable at ambient pressure. The direct band gap values in the range of 0.658–1.470 eV and the excellent optoelectronic properties of these six Si allotropes suggest that they are promising photovoltaic materials compared to diamond silicon.

Graphical abstract: Six new silicon phases with direct band gaps

Article information

Article type
Paper
Submitted
03 Jun 2019
Accepted
16 Aug 2019
First published
16 Aug 2019

Phys. Chem. Chem. Phys., 2019,21, 19963-19968

Six new silicon phases with direct band gaps

Q. Wei, W. Tong, B. Wei, M. Zhang and X. Peng, Phys. Chem. Chem. Phys., 2019, 21, 19963 DOI: 10.1039/C9CP03128F

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