Issue 27, 2019

Depth-dependent electronic band structure at the Au/CH3NH3PbI3−xClx junction

Abstract

The electronic properties of the interface between Au and organometallic triiodide perovskite (CH3NH3PbI3−xClx) were investigated by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). CH3NH3PbI3−xClx films were prepared on Au surfaces by spin casting with various concentrations to control the film thickness. Their morphology was examined by atomic force microscopy (AFM). CH3NH3PbI3−xClx films exhibited a maximum valence band edge of 5.91 eV. The energy levels shifted downward by 0.26 eV with a perovskite coverage of 116.3 nm, indicating that band bending occurs at the interface. The observed energy level shift indicates an interface dipole at the Au/CH3NH3PbI3−xClx junction. These findings contribute to the understanding of how perovskite materials function in electronic devices and aid in the design of new perovskite materials.

Graphical abstract: Depth-dependent electronic band structure at the Au/CH3NH3PbI3−xClx junction

Supplementary files

Article information

Article type
Paper
Submitted
11 Feb 2019
Accepted
05 Mar 2019
First published
06 Mar 2019

Phys. Chem. Chem. Phys., 2019,21, 14541-14545

Depth-dependent electronic band structure at the Au/CH3NH3PbI3−xClx junction

M. J. Cha, Y. J. Park, J. H. Seo and B. Walker, Phys. Chem. Chem. Phys., 2019, 21, 14541 DOI: 10.1039/C9CP00834A

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