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Depth-dependent electronic band structure at the Au/CH3NH3PbI3−xClx junction

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Abstract

The electronic properties of the interface between Au and organometallic triiodide perovskite (CH3NH3PbI3−xClx) were investigated by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). CH3NH3PbI3−xClx films were prepared on Au surfaces by spin casting with various concentrations to control the film thickness. Their morphology was examined by atomic force microscopy (AFM). CH3NH3PbI3−xClx films exhibited a maximum valence band edge of 5.91 eV. The energy levels shifted downward by 0.26 eV with a perovskite coverage of 116.3 nm, indicating that band bending occurs at the interface. The observed energy level shift indicates an interface dipole at the Au/CH3NH3PbI3−xClx junction. These findings contribute to the understanding of how perovskite materials function in electronic devices and aid in the design of new perovskite materials.

Graphical abstract: Depth-dependent electronic band structure at the Au/CH3NH3PbI3−xClx junction

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Publication details

The article was received on 11 Feb 2019, accepted on 05 Mar 2019 and first published on 06 Mar 2019


Article type: Paper
DOI: 10.1039/C9CP00834A
Citation: Phys. Chem. Chem. Phys., 2019, Advance Article

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    Depth-dependent electronic band structure at the Au/CH3NH3PbI3−xClx junction

    M. J. Cha, Y. J. Park, J. H. Seo and B. Walker, Phys. Chem. Chem. Phys., 2019, Advance Article , DOI: 10.1039/C9CP00834A

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