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Electronic structures and transport properties of SnS–SnSe nanoribbon lateral heterostructures

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Abstract

The electronic structures of phosphorene-like SnS/SnSe nanoribbons and the transport properties of a SnS–SnSe nanoribbon lateral heterostructure are investigated by using first-principles calculations combined with nonequilibrium Green's function (NEGF) theory. It is demonstrated that SnS and SnSe nanoribbons with armchair edges (A-SnSNRs and A-SnSeNRs) are semiconductors, independent of the width of the ribbon. Their bandgaps have an indirect-to-direct transition, which varies with the ribbon width. In contrast, Z-SnSNRs and Z-SnSeNRs are metals. The transmission gap of armchair SnSNR–SnSeNR is different from the potential barrier of SnSNR and SnSeNR. The IV curves of zigzag SnSNR–SnSeNR exhibit a negative differential resistive (NDR) effect due to the bias-dependent transmission in the voltage window and are independent of the ribbon width. However, for armchair SnSNR–SnSeNR, which has a low current under low biases, it is only about 10−6 μA. All the results suggest that phosphorene-like MX (M = Sn/Ge, X = S/Se) materials are promising candidates for next-generation nanodevices.

Graphical abstract: Electronic structures and transport properties of SnS–SnSe nanoribbon lateral heterostructures

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Publication details

The article was received on 23 Jan 2019, accepted on 26 Mar 2019 and first published on 27 Mar 2019


Article type: Paper
DOI: 10.1039/C9CP00427K
Citation: Phys. Chem. Chem. Phys., 2019, Advance Article

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    Electronic structures and transport properties of SnS–SnSe nanoribbon lateral heterostructures

    Y. Yang, Y. Zhou, Z. Luo, Y. Guo, D. Rao and X. Yan, Phys. Chem. Chem. Phys., 2019, Advance Article , DOI: 10.1039/C9CP00427K

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